Datasheet4U Logo Datasheet4U.com

SSE90N06-30P - N-Channel Enhancement Mode MosFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSE16020 Hybrid Voltage Regulator Module Sanken
SSE4N60 N-Channel Enhancement Mode Power MOSFET SeCoS Halbleitertechnologie
SSEMI4184MU Common Mode Filter Sinosemi
SSEPAA5-02N Low Capacitance ESD Protection Array Silicon Standard
SSEPAA5-02S Low Capacitance ESD Protection Array Silicon Standard

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SSE90N06-10P N-Channel Enhancement Mode MosFET
SSE90N06-15P N-Channel Enhancement Mode MosFET
SSE90N04-03P N-Channel Enhancement Mode MosFET
SSE90N08-08 N-Channel Enhancement Mode MosFET
SSE90N10-14 N-Channel Enhancement Mode MosFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSE90N06-30P Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D C TO-220P B R E G A T S TYPICAL APPLICATIONS     Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switch speed. High performance trench technology.