SSG4801 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a mon drain arrangement to from a bidirectional blocking switch. SOP-8 Features - - - A Simple Drive Requirement Lower On-resistance Low Gate Charge MARKING REF. 4801SS    = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13’ inch S1 D1 G1 D1 D2 D2 S2 G2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Total Power Dissipation 1 Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient (Max.) Notes： 1. Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦...