Download SSG4825PE Datasheet PDF
SSG4825PE page 2
Page 2

SSG4825PE Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.

SSG4825PE Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves boar
  • 11.5 -9.3
  • 2.1 3.1 2.3 -55 ~ 150 25 50
  • 30 -1 -50
  • 29 -0.8 Dynamic
  • V V μA μA μA A mΩ S V
  • 1 -5 13 19
  • Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage
  • 25 11 17 230