| Part number | SSG4801 |
|---|---|
| Datasheet | SSG4801_SeCoS.pdf |
| File Size | 1.00 MB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | Dual-P Enhancement Mode Power MOSFET |
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The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a mon drain arrangement to from a bidirectional blocking switch.
See all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| SSG4800J-C | Dual-N Enhancement Mode Power MOSFET |
| SSG4825P | P-Channel Mode Power MOSFET |
| SSG4825PE | P-Channel Mode Power MOSFET |
| SSG4835P | P-Ch Enhancement Mode Power MOSFET |
| SSG4835PR-C | P-Ch Enhancement Mode Power MOSFET |
| SSG4841P | P-Ch Enhancement Mode Power MOSFET |
| SSG4842N | N-Ch Enhancement Mode Power MOSFET |
| SSG4874N | N-Channel Mode Power MOSFET |
| SSG4890N | Dual-N Enhancement Mode Power MOSFET |
| SSG4224 | N-Ch Enhancement Mode Power MOSFET |
