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SSG4801 Datasheet Dual-P Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V.

The device is suitable for use as a load switch or in PWM applications.

It may be used in a common drain arrangement to from a bidirectional blocking switch.

Overview

SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen &.

Key Features

  • A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E.