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SSG4800J-C Datasheet Dual-N Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

The SSG4800J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

SOP-8 B

Overview

Elektronische Bauelemente SSG4800J-C 6.9A, 30V, RDS(O ) 22mΩ Dual- Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen &.

Key Features

  • Simple Drive Requirement Low Gate Charge Green Device Available.