SSG4800J-C Description
The SSG4800J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
SSG4800J-C is Dual-N Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Part Number | Description |
|---|---|
| SSG4801 | Dual-P Enhancement Mode Power MOSFET |
| SSG4825P | P-Channel Mode Power MOSFET |
| SSG4825PE | P-Channel Mode Power MOSFET |
| SSG4835P | P-Ch Enhancement Mode Power MOSFET |
| SSG4835PR-C | P-Ch Enhancement Mode Power MOSFET |
The SSG4800J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.