SSG4957 Datasheet P-Channel Enhancement Mode Power MosFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSG4957 -7.7A, -30V,RDS(ON) 24m P-Channel Enhancement Mode Power Mos.

SSG4957 p-channel enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SSG4957
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	428.29 KB
Description	P-Channel Enhancement Mode Power MosFET
Download	SSG4957 Download (PDF)

General Description

The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Key Features

Low on-resistance.
Simple drive requirement.
Dual P MOSFET Package D1 D1 D2 D2 8 765 Date Code 4957SS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 123 4 S1 G1 S2 G2 Symbol VDS VGS ID@TA=25oC ID@TA=70oC IDM PD@TA=25oC Tj, Tstg SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.

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