SSG4957 - P-Channel Enhancement Mode Power MosFET

Product Overview

SeCoS

Datasheet Details

Part number	SSG4957
Manufacturer	SeCoS
File Size	428.29 KB
Description	P-Channel Enhancement Mode Power MosFET
Datasheet	SSG4957 Datasheet
Additional preview pages of the SSG4957 datasheet.

Product details

Description

The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

Low on-resistance.
Simple drive requirement.
Dual P MOSFET Package D1 D1 D2 D2 8 765 Date Code 4957SS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 123 4 S1 G1 S2 G2 Symbol VDS VGS ID@TA=25oC ID@TA=70oC IDM PD@TA=25oC Tj, Tstg SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.

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Published: May 28, 2024 |