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SSQ04N65J Datasheet Preview

SSQ04N65J Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSQ04N65J
4A, 650V, RDS(ON) 3
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. It is designed
for high voltage, high speed switching applications such as
power supplies, converters, power motor control and bridge
circuits.
TO-220J
FEATURES
High current rating
Low RDS(ON)
Lower capacitance
Lower total gate charge
Tighter VSD specifications
Specified avalanche energy
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
10.010 10.350
3.735 3.935
2.590 2.890
12.060 12.460
1.170 1.370
0.710 0.910
13.400 13.800
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.980 5.180
3.560 3.960
4.470 4.670
1.200 1.400
8.500 8.900
2.520 2.820
0.330 0.650
D
2
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Single Pulse Avalanche Energy 1
IDM
EAS
Power Dissipation
Maximum Lead Temperature for Soldering
Purposes@1/8’’ from case for 5 seconds
PD
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient
RθJA
Rating
650
±30
4
16
280
2
260
-55~150
62.5
Unit
V
V
A
A
mJ
W
°C
°C
°C/ W
http://www.SeCoSGmbH.com/
17-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SSQ04N65J Datasheet Preview

SSQ04N65J Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSQ04N65J
4A, 650V, RDS(ON) 3
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min.
Typ.
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Diode Forward Voltage 2
Drain-Source Leakage Current
Gate-Body Leakage Current 2
BVDSS
650
-
VSD -
-
IDSS
-
-
IGSS
-
-
On Characteristics 2
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
2
-
RDS(ON)
-
-
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss
Coss
- 760
- 180
Reverse Transfer Capacitance
Crss - 20
Switching Characteristics
Total Gate Charge
Gate-Source Charge
Qg - 5
Qgs - 2.7
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Qgd
Td(on)
-
-
2
20
Rise Time
Turn-off Delay Time
Tr - 10
Td(off)
-
40
Fall Time
Tf -
Notes:
1. EAS condition: L=30mH, IL=4A, VDD=100V, RG=25, starting TJ=25°C.
2. Pulse Test : Pulse width300µs, duty cycle2%.
20
Max. Unit Test condition
-
1.5
25
±100
V VGS=0, ID=250µA
V VGS=0, IS=4A
µA VDS=600V, VGS=0
nA VDS=0V, VGS=±30V
4 V VDS=VGS, ID=250µA
3 VGS=10V, ID=2A
-
VDS=25V
- pF VGS=0
f=1MHz
-
-
VDS=480V
- nC VGS=10V
- ID=4A
-
VDD=300V
-
-
nS
VGS=10V
RG=9.1
ID=4A
-
http://www.SeCoSGmbH.com/
17-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SSQ04N65J
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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