SSQ04N65J
Description
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time.
Key Features
- E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800
- 540 TYP. REF.
