SSQ04N65J Datasheet - SeCoS

N-Channel MOSFET

SSQ04N65J Features

* High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millim

SSQ04N65J General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, con.

SSQ04N65J Datasheet (245.73 KB)

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Datasheet Details

Part number:

SSQ04N65J

Manufacturer:

SeCoS

File Size:

245.73 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SSQ04N65J 4A, 650V, RDS(ON) 3 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .

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SSQ04N65J N-Channel MOSFET SeCoS

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SSQ04N65J Features

SSQ04N65J General Description

Datasheet Details

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