SSQ04N65J
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor control and bridge circuits.
TO-220J
FEATURES
High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy
REF.
A B C D E F G H
Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800
2.540 TYP.
REF.
I J K L M N Q
Millimeter Min. Max. 4.980 5.180 3.560 3.960 4.470 4.670 1.200 1.400 8.500 8.900 2.520 2.820 0.330 0.650
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Single Pulse Avalanche...
