SSQ04N65J Overview
Description
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time.
Key Features
- High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF
- A B C D E F G H Millimeter Min
- I J K L M N Q Millimeter Min
