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SSQ182N45SG - N-Ch Enhancement Mode Power MOSFET

General Description

The SSQ182N45SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSQ182N45SG meet the RoHS and Green Product with Function reliability approved.

Key Features

  • RDS(on)≦2.9mΩ @VGS=10V RDS(on)≦4mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSQ182 45SG 182A, 45V, RDS(O ) 2.9mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSQ182N45SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ182N45SG meet the RoHS and Green Product with Function reliability approved. TO-220 FEATURES RDS(on)≦2.9mΩ @VGS=10V RDS(on)≦4mΩ @VGS=4.