SST8810J-C SeCoS Dual N-Ch Enhancement Mode Power MOSFET

Description SST8810J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. SOT-26 MARKING L8810   = Production Line Indication PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ORDER INFORMATION Par...
Features tinuous Drain Current Pulsed Drain Current 1 Lead Temperature for Soldering Purposes @1/8’’ from case for 10s Junction and Storage Temperature Range ID IDM TL TJ, TSTG Thermal Data Thermal Resistance from Junction-Ambient RθJA Note: 1. Repetitive rating: pulse width is limited by the junction temperature. Rating 20 ±12 7 30 260 150, -55~150 8...

Datasheet PDF File SST8810J-C Datasheet 607.37KB

SST8810J-C   SST8810J-C   SST8810J-C  

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