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SSU90N04-02B - N-Ch Enhancement Mode Power MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.

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Full PDF Text Transcription for SSU90N04-02B (Reference)

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Elektronische Bauelemente SSU90N04-02B N-Ch Enhancement Mode Power MOSFET 162A, 40V, RDS(ON) 2.3mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPT...

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oHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION P

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