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STT3998N - Dual N-Channel MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provide higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe TSOP-6 saves board space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet preview – STT3998N

Datasheet Details

Part number STT3998N
Manufacturer SeCoS
File Size 155.82 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet STT3998N Datasheet
Additional preview pages of the STT3998N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provide higher efficiency and extends battery life.  Low thermal impedance copper leadframe TSOP-6 saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 20 RDS(on) (m 58@VGS= 4.
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