STT3998N-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 4A, 20V, RDS(ON) 37mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3998N-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The STT3998N-C meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package TSOP-6 3K Leader Size 7 inch ORDER INFORMATION Part Number Type STT3...