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STT3998N-C Datasheet Dual N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente STT3998N-C 4A, 20V, RDS(ON) 37mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and.

General Description

The STT3998N-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The STT3998N-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

STT3998N-C Distributor