Datasheet4U Logo Datasheet4U.com

STT3998N-C - Dual N-Channel MOSFET

General Description

The STT3998N-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STT3922N N-channel MOSFET SeCoS Halbleitertechnologie
STT320 Thyristor-Thyristor Modules Sirectifier Semiconductors
STT3414 N-Channel MOSFET SamHop Microelectronics
STT3416 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop Microelectronics
STT3418 N-Channel MOSFET SamHop Microelectronics

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
STT3998N Dual N-Channel MOSFET
STT3921P P-Channel MOSFET
STT3930N N-Channel MOSFET
STT3962N N-Channel MOSFET
STT3962NE N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente STT3998N-C 4A, 20V, RDS(ON) 37mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3998N-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The STT3998N-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7 inch ORDER INFORMATION Part Number Type STT3998N-C Lead (Pb)-free and Halogen-free TSOP-6 A E L 654 B 123 F DG K C H J REF.