STT3998N Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. Features - Low RDS(on) provide higher efficiency and extends battery life. - Low thermal impedance copper leadframe TSOP-6 saves board space. - Fast switching speed. - High...