SMG2361P

The SMG2361P is P-Channel MOSFET designed by SeCoS Halbleitertechnologie.

Product Overview

SeCoS Halbleitertechnologie

Datasheet Details

Part number	SMG2361P
Manufacturer	SeCoS Halbleitertechnologie
File Size	444.48 KB
Description	P-Channel MOSFET
Datasheet	SMG2361P-SeCoSHalbleitertechnologie.pdf
Additional preview pages of the SMG2361P datasheet.

Product details

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J REF. A B C D E F REF. G H J K L.

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Published: Aug 9, 2014 |