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SMG5403 - P-Channel MOSFET

General Description

The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM applications.

Key Features

  • Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMG5403 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 115 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. 1 SC-59 A L 3 3 Top View 2 C B 1 2 FEATURES Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.