Datasheet4U Logo Datasheet4U.com

SMG5406 - N-Channel MOSFET

General Description

The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SMG5406 is universally used for all commercial-industrial applications.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SMG5402 N-Channel MOSFET SeCoS Halbleitertechnologie
SMG5403 P-Channel MOSFET SeCoS Halbleitertechnologie
SMG5403 P-Channel 30V Power MOSFET VBsemi
SMG5C60 THYRISTOR SanRex Corporation
SMG5C60C THYRISTOR SanRex Corporation

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SMG5409 P-Channel MOSFET
SMG5409-C P-Channel Enhancement Mode MOSFET
SMG1332E N-Channel Enhancement Mode Power MosFET
SMG1333 P-Channel Enhancement Mode Power MosFET
SMG138K N-Channel Enhancement Mode Power MosFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SMG5406 3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications. FEATURES  Simple Drive Requirement  Small Package Outline MARKING 5406 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.