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SMG5409-C - P-Channel Enhancement Mode MOSFET

General Description

The SMG5409-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG5409-C -2.6A, -30V, RDS(ON) 120mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5409-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMG5409-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge MARKING 5409 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMG5409-C Lead (Pb)-free and Halogen-free SC-59 A L 3 Top View CB 1 1 2 K E D F G H 3 2 J REF.