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SMG2392N - N-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 REF. G H J K L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMG2392N Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are A L 3 SC-59 3 Top View C B 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 REF.