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2N3053 Datasheet Preview

2N3053 Datasheet

MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

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2N3053
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
2.54
(0.100)
45˚
TO39 PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
FEATURES
• VCEO = 40V
• IC = 0.7A
• Ptot = 5W
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector Base Voltage
60V
VCEO
Collector Emitter Voltage
40V
VCER
Collector Emitter Sustaining Voltage
50V
VCEX
Collector - Emiiter Voltage
60V
VEBO
Emitter-Base Voltage
5V
IC Collector Current
0.7A
PTOT
Power Dissipation Tamb = 25°C
1W
Tcase = 25°C
5W
Tj Junction Temperature
200°C
Tstg Storage Temperature
–65 to 200°C
Rth(jc)
Thermal Resistance Junction to Case
35°C / W
Rth(ja)
Thermal Resistance Junction to Ambient
175°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.01/01




Seme LAB

2N3053 Datasheet Preview

2N3053 Datasheet

MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

No Preview Available !

2N3053
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
VCEO(SUS)
VCER(SUS)*
V(BR)CBO*
V(BR)EBO*
ICBO
IEBO
VCE(sat)*
VBE(sat)*
h21E*
fT
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut-off Current
Emitter - Base Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Static Forward Current Transfer ratio
Transistion Frequency
IC = 100mA
RBE = 10W
IC = 0.1mA
IE = 0.1mA
VCB = 30V
VEB = 4V
IC = 0.15A
IC = 0.15A
IC = 0.15A
VCE = 10V
f = 100MHz
IB = 0
IC = 100mA
IE = 0
IC = 0
IE = 0
IC = 0
IB = 0.015A
IB = 0.015A
VCE = 10V
IC = 0.05A
C22b
C11b
Output Capacitance
Input Capacitance
VCB = 10V
VEB = 10V
f =1MHz
f =1MHz
Min.
40
50
60
5
50
100
* Pulsed tp = 300mS d £ 2 %
Typ.
Max. Unit
V
0.25
0.25
1.4
1.7
250
15
80
mA
V
MHz
pF
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.01/01


Part Number 2N3053
Description MEDIUM POWER SILICON NPN PLANAR TRANSISTOR
Maker Seme LAB
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2N3053 Datasheet PDF






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