* 5 .0 8 (0 .2 0 0 ) ty p .
* V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3
* ID = 5.5A
* RDSON = 0.40W 4 5 ° TO
* 39 METAL PACKAGE Underside View PIN 1
* Source PIN 2
* Gate PIN
2N6798
Seme LAB
21.20 KB
N-channel enhancement mode transistor.
2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE.
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