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BDY90 - NPN SILICON TRANSISTOR

Key Features

  • V(BR)CEO = 100V (Min).
  • Hermetically Sealed TO3 Metal Package.
  • Screening Options Available 7.92 (0.312) 12.70 (0.50).

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Datasheet Details

Part number BDY90
Manufacturer Seme LAB
File Size 89.82 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet BDY90 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BDY90 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 12 3 (case) 3.84 (0.151) 4.09 (0.161) NPN SILICON TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) FEATURES • V(BR)CEO = 100V (Min) • Hermetically Sealed TO3 Metal Package • Screening Options Available 7.92 (0.312) 12.70 (0.50) APPLICATIONS • Linear & Switching Applications 1 = Base TO3 (TO-204AA) 2 = Emitter Case = Collector ABSOLUTE MAXIMUM RATINGS ( Tc = 25°C unless otherwise stated) VCEO Collector - Emitter Voltage 100V VCEV Collector - Emitter Voltage (VBE = -1.