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BDY90 Datasheet Preview

BDY90 Datasheet

NPN SILICON TRANSISTOR

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BDY90
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
12
3
(case)
3.84 (0.151)
4.09 (0.161)
NPN SILICON TRANSISTOR
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
FEATURES
V(BR)CEO = 100V (Min)
Hermetically Sealed TO3 Metal
Package
Screening Options Available
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
Linear & Switching
Applications
1 = Base
TO3 (TO-204AA)
2 = Emitter Case = Collector
ABSOLUTE MAXIMUM RATINGS ( Tc = 25°C unless otherwise stated)
VCEO Collector - Emitter Voltage
100V
VCEV Collector - Emitter Voltage (VBE = -1.5V)
120V
VCBO Collector - Base Voltage
120V
VEBO Emitter – Base Voltage
6V
IC Collector Current - Continuous
10A
Peak
15A
IB Base Current
PD
Power Dissipation at
TC = 25°C
Derate Above 25°C
2A
60W
0.4W/°C
TJ Junction Temperature
Tstg Storage Temperature
175°C
-65 to +175°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8018, ISS 1




Seme LAB

BDY90 Datasheet Preview

BDY90 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

BDY90
THERMAL CHARACTERISTICS
RθJC Thermal resistance junction to case
Max Unit
2.5 °C/W
ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V *(BR)CEO
ICEV
IEBO
ICBO
hFE*
V *CE(sat)
V *BE(sat)
Collector-Emitter Breakdown Voltage IC = 10mA
Collector-Emitter Cut-Off Current
VCE = 120V
Emitter-Base Cut-Off Current
Collector-Base Cut-Off Current
Forward-current transfer ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturated Voltage
IC = 0
IE = 0
IC = 1.0A
IC = 5.0A
IC = 10A
IC = 5A
IC = 10A
IC = 5A
IC = 10A
IB = 0
VBE = -1.5V
TC = 150°C
VEB = 6V
VCB = 120V
VCE = 2V
VCE = 5V
VCE = 5V
IB = 500mA
IB = 1.0A
IB = 500mA
IB = 1.0A
100
30
30
20
Typ.
Max.
1.0
3
1.0
1.0
120
0.5
1.5
1.2
1.5
Unit
V
mA
V
DYNAMIC CHARACTERISTICS
fT Transition Frequency
Cobo Output Capacitance
ton Turn-On Time
ts Storage Time
tf Fall Time
* Pulse test tp = 300µs, δ < 2%
IC = 500mA
f = 10MHz
IE = 0
f = 1.0MHz
VCC = 30V
IC = 5A
VCC = 30V
IC= 5A
VCE = 5V
VCB = 10V
IB1= 0.5A
IB1 = -IB2 = 0.5A
20
MHz
200 pF
0.35
1.3
0.2
µs
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8018, ISS 1


Part Number BDY90
Description NPN SILICON TRANSISTOR
Maker Seme LAB
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BDY90 Datasheet PDF






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