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Seme LAB

BFC51 Datasheet Preview

BFC51 Datasheet

4TH GENERATION MOSFET

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SEME
LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
3.55 (0.140)
3.81 (0.150)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
5.25 (0.215)
BSC
BFC51
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
500V
16.0A
0.40
Terminal 1 Gate
Terminal 3 Source
Terminal 2 Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS
Gate – Source Voltage
PD
TJ , TSTG
Total Power Dissipation @ Tcase = 25°C
Operating and Storage Junction Temperature Range
TL Lead Temperature : 0.063” from Case for 10 Sec.
500
16
64
±30
240
–55 to 150
300
V
A
A
V
W
°C
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
VGS = 0V , ID = 250µA
IDSS
IGSS
VGS(TH)
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 1.0mA
ID(ON)
RDS(ON)
On State Drain Current 2
Drain – Source On State Resistance 2
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Min.
500
2
16
Typ. Max. Unit
V
250
µA
1000
±100 nA
4V
A
0.40
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94




Seme LAB

BFC51 Datasheet Preview

BFC51 Datasheet

4TH GENERATION MOSFET

No Preview Available !

SEME
LAB
DYNAMIC CHARACTERISTICS
Characteristic
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge3
Qgs Gate – Source Charge
Qgd Gate – Drain (“Miller”) Charge
td(on)
Turn–on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS Continuous Source Current (Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
trr
Reverse Recovery Time
IS = – ID [Cont.] , dls / dt = 100A/µs
Qrr Reverse Recovery Charge
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
Test Conditions
SOA1
Safe Operating Area
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
SOA2
Safe Operating Area
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.
ILM Inductive Current Clamped
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
BFC51
Min. Typ. Max. Unit
1430 1800
330 465 pF
130 200
64 105
8.7 12 nC
34 51
12 24
21 42
ns
51 77
27 54
Min.
148
2.2
Typ.
296
4.4
Max. Unit
16
A
64
1.3 V
592 ns
8.8 µC
Min. Typ. Max. Unit
240 W
240 W
64 A
Min.
Typ.
Max. Unit
0.51
°C/W
40
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94


Part Number BFC51
Description 4TH GENERATION MOSFET
Maker Seme LAB
Total Page 2 Pages
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