GENERATION Datasheet | Specifications & PDF Download

AW8738 2014 05 V1.0 、、、Multi-Level AGC K  Multi-Level AGC ，，  ：40μV  ：0.008%  83%  ：0.6W、0.8W、1W 1.2W  ，  6  AW8736，AW8737 

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Data Sheet FEATURES Outstanding gain linearity Ultrahigh gain, 5000 V/mV min Low VOS over temperature, 55 μV max TCVOS, 0.3 μV/°C max High PSRR, 3 μV/

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IDT08S60C www.DataSheet4U.com 2nd Generation thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switchin

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ATJ2091N PRODUCT DATASHEET ATJ2091N Datasheet Version 1.1 Copyright© Actions Semiconductor Co., Ltd 2007. All rights reserved. Ver. 1.1 1/46 2007

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VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and T

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2nd Generation LLC Current Resonant Control IC, “FA6A00N Series” CHEN Jian

YAMADAYA Masayuki

SHIROYAMA Hironobu

ABSTRACT LLC current resonant po

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CYAT8168X PSoC™ Automotive Multitouch Generation 6XL Datasheet Features • Automotive Electronics Council (AEC) AEC-Q100 qualified • Multitouch capacit

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SUN07A65D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.2Ω (Typ.)  Low gat

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SUN12A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.68Ω (Typ.)  Low ga

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SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.55Ω (Typ.)  Low ga

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SUN07A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.05Ω (Typ.)  Low ga

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SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)  Low ga

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SUN04A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.1Ω (Typ.)  Low gat

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SUN08A70F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.85Ω (Typ.)  Low ga

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L I N D O C # : 1562 LX1562/1563 S E C O N D -G E N E R AT I O N P O W E R F A C T O R C O N T R O L L E R T H E I N F I N I T E P O W E R O F

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LX1689 I N T E G R A T E D P R O D U C T S Third Generation CCFL Controller P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES WWW . Microsemi . C

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NS4250 2X3W NS4250 V1.0 Nsiway 2011 10 1 2010.10 V1.0 NS4250 2X3W Nsiway 2 NS4250 2X3W 1

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APT100GF60JRD 600V 140A E C Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fa

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APT15GT60KR 600V 31A Thunderbolt IGBT™ TO-220 The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology th

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APT20GF120BR APT20GF120BR 1200V 32A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technol

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