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Seme LAB
Seme LAB

BSS74 Datasheet Preview

BSS74 Datasheet

HIGH VOLTAGE PNP SILICON TRANSISTOR

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BSS74 pdf
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
BSS74R
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
31
2
TO–18 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Continuous Collector Current
PD
Total Device Dissipation
TAMB = 25°C
Derate above 25°C
PD
Total Device Dissipation
TC = 25°C
Derate above 25°C
TJ , TSTG
RqJC
Operating Junction & Storage Temperature Range
Thermal Resistance, Junction – Case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
200V
200V
5V
0.5A
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
Prelim. 9/95



Seme LAB
Seme LAB

BSS74 Datasheet Preview

BSS74 Datasheet

HIGH VOLTAGE PNP SILICON TRANSISTOR

No Preview Available !

BSS74 pdf
SEME
LAB
BSS74R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
Collector – Emitter Breakdown Voltage IC = 10mA
Collector – Base Breakdown Voltage IC = 100mA
Emitter – Base Breakdown Voltage IE = 100mA
Collector Cut-off Current
VCB = 150V
Collector Cut-off Current
VCE = 150V
Emitter Cut-off Current
VBE = 5V
IB = 0
IE = 0
IC = 0
IE = 0
IB = 0
IC = 0
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
VCE = 1V
VCE = 10V
VCE = 10V
VCE = 10V
IC = 10mA
IC = 30mA
IC = 10mA
IC = 30mA
IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 30mA
IB = 1mA
IB = 3mA
IB = 1mA
IB = 3mA
DYNAMIC CHARACTERISTICS
ft
Current Gain Bandwidth Product
IC = 20mA
f = 20MHz
VCE = 20V
Cob Output Capacitance
IE = 0
f = 1MHz
VCB = 20V
Cib Input Capacitance
IC = 0
f = 1MHz
VEB = 0.5V
ton Turn–On Time
toff Turn–Off Time
* Pulse Test: tp = 300ms , d £ 1%.
IB1 = 10mA
VCC = 100V
IB2 = 10mA
VCC = 100V
IC = 50mA
IC = 50mA
Min.
200
200
6
20
30
35
35
50
Typ.
110
3.5
45
100
400
Max. Unit
V
50
500 nA
50
150
0.3
V
1.3
0.8
V
0.9
200 MHz
pF
ns
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/95


Part Number BSS74
Description HIGH VOLTAGE PNP SILICON TRANSISTOR
Maker Seme LAB
Total Page 2 Pages
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