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BUX77A Datasheet Preview

BUX77A Datasheet

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR

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SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A / BUX78A
High Power
Hermetic TO-66 Metal Package
Ideally suited for Driver Circuits, Switching
and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Continuous Collector Current
IB Base Current
PD Total Power Dissipation at TC = 25°C
Derate Above 25°C
TJ Junction Temperature Range
Tstg Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
BUX77A
NPN
BUX78A
PNP
100V
-100V
80V -80V
6V -6V
8A
2A
40W
0.23W/°C
-65 to +200°C
-65 to +200°C
Min. Typ. Max. Units
4.4 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7743
Issue 2
Page 1 of 3




Seme LAB

BUX77A Datasheet Preview

BUX77A Datasheet

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR

No Preview Available !

SILICON PLANAR EPITAXIAL
NPN/PNP TRANSISTORS
BUX77A / BUX78A
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (1)
Symbols Parameters
Test Conditions
V(BR)CEO(2)
V(BR)CES
V(BR)EBO
ICEO
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = 50mA
IC = 2mA
IE = 1.0mA
VCE = 60V
IB = 0
VBE = 0
IC = 0
IB = 0
ICBO
Collector Cut-Off Current
VCB = 80V
IE = 0
TC = 150°C
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
IC = 0.5A
VCE = 5V
hFE(2)
Forward-current transfer
ratio
IC = 2A
IC = 5A
IC = 1.0A
VCE = 5V
VCE = 5V
VCE = 5V
VCE(sat)(2)
VBE(sat)(2)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 5A
IC = 5A
TC = -40°C
IB = 0.5A
IB = 0.5A
DYNAMIC CHARACTERISTICS
|hfe|
Small signal forward-current
transfer ratio
ton Turn-On Time
toff Turn-Off Time
IC = 0.5A
VCE = 5V
f = 20MHz
IC = 5A
IB1 = 0.5A
VCC = 40V
IC = 5A
VCC = 40V
IB1 = - IB2 = 0.5A
Notes
(1) For PNP (BUX78A) device, voltage and current values are negative
(2) Pulse Width 300us, δ ≤ 2%
Min. Typ Max. Units
80
100 V
6
10
0.5
µA
150
0.5
50
50 250
30
25
1.0
V
1.3
1.5
0.3 0.4
1.1 2.5
µs
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7743
Issue 2
Page 2 of 3


Part Number BUX77A
Description SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR
Maker Seme LAB
Total Page 3 Pages
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