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SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BUX77
• High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching
and Amplifier Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
80V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
5A
IB Base Current
0.8A
PD Total Power Dissipation at TC = 25°C
40W
Derate Above 25°C
0.23W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units 4.