Datasheet4U Logo Datasheet4U.com

BUX77 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BUX77.

General Description

·Contunuous Collector Current-IC= 5A ·Collector Power Dissipation- : PC= 40W @TC= 25℃ ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators and general purpose power amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.4 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 VCES Collector-Emitter Voltage IC= 2mA;

BUX77 Distributor & Price

Compare BUX77 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.