* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* USEFUL PO at 1 GHz
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase =
D1007UK
Seme LAB
89.18 KB
Metal gate rf silicon fet.
TetraFET D1007UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 H.
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