D1018 fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
D M Q
P
I
N
O
H
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH G.
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 10 dB MINIMUM
DD
PIN 1 PIN .
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