D1018 Datasheet | Seme LAB

FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 10 d B MINIMUM PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (MON) DRAIN 2 SOURCE (MON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45° 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 SOURCE (MON) GATE 2 SOURCE (MON) Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.64 0.13 Inches 0.360 0.500 45° 0.270 0.030 0.385 0.750 0.165 0.125 0.060R 0.065R 0.650 0.900 0.005 0.250 0.424 APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj - Per Side Power Dissipation Drain - Source Breakdown Voltage - Gate - Source Breakdown Voltage - Drain Current - Storage Temperature Maximum Operating Junction Temperature 250W 70V ±20V 15A - 65 to 150°C 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 D1018UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS η Drain- Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance - mon Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10m A VDS = 10V PO = 100W VDS = 28V f = 500MHz IDQ = 1.2A ID = 100m A VGS = 0 VDS = 0 VDS = VGS ID = 3A 1 2.4 10 50 20:1 VGS = - 5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ. Max. Unit V 3 1 7 m A µA V S d B % - 180 90 7.5 p F p F p F VGS(th) Gate Threshold Voltage - TOTAL DEVICE VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer...