* SIMPLIFIED AMPLIFIER DESIGN D M Q P I N O H
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM DD PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM
D1018
Seme LAB
17.44 KB
Metal gate rf silicon fet.
TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A C E (2 pls) K 1 2 3 4 F G 8 J Typ. 7 6 5 GOLD METALLISED MULTI-PURPOSE SIL.
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