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TetraFET
D1011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE
SO8 PACKAGE
PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE
• VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM
Dim. A B C D E F G H J K L M N P
mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57
Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180
Tol. ±0.
D1011 Datasheet
