D1014UK
D1014UK is METAL GATE RF SILICON FET manufactured by Seme LAB.
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- LOW Crss
- USEFUL PO AT 1GHz
- LOW NOISE
- HIGH GAIN
- 12 d B MINIMUM
APPLICATIONS
- HF/VHF/UHF MUNICATIONS from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Power Dissipation
87.5W
BVDSS
Drain
- Source Breakdown Voltage
70V
BVGSS
Gate
- Source Breakdown Voltage
±20V
ID(sat)
Drain Current
10A
Tstg
Storage Temperature
- 65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
Document Number 4049 Issue 3
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain- Source BVDSS Breakdown Voltage
VGS =...
