D1014UK Datasheet PDF

MECHANICAL DATA

C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. Inches Tol. 0.25 0.650 0.010 0.13 0.250 0.005 5° 45° 5° 0.13 0.130 0.005 0.08 0.745 0.003 0.13 0.060 0.005 0.13 0.085 0.005 0.08 0.560 0.003 0.13 0.060 0.005 0.13 0.250 0.005 0.03 0.005 0.001 0.51 0.200 0.020 0.13 0.050 x 45° 0.005 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● LOW Crss
● USEFUL PO AT 1GHz
● LOW NOISE
● HIGH GAIN – 12 dB MINIMUM

APPLICATIONS

● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 87.5W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 10A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc.