D1013UK
D1013UK is METAL GATE RF SILICON FET manufactured by Seme LAB.
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- LOW Crss
- USEFUL PO AT 1GHz
- LOW NOISE
- HIGH GAIN
- 13 d B MINIMUM
APPLICATIONS
- HF/VHF/UHF MUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Power Dissipation
50W
BVDSS
Drain
- Source Breakdown Voltage
70V
BVGSS
Gate
- Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg
Storage Temperature
- 65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
Document Number 6217 Issue 2
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain- Source BVDSS Breakdown...