D1019UK fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 1.
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 16 dB MINIMUM
APPLICATIONS
<.
Image gallery
TAGS
Download (Size : 85.78KB)