* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM 45˚ TO-39 PACKAGE PIN1
* DRAIN PIN2
* GATE PIN3
* SOURCE APPLICATIONS
D2008UK
Seme LAB
27.79 KB
Metal gate rf silicon fet.
TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.5.
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