* SIMPLIFIED AMPLIFIER DESIGN M I E K G
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° T
D2010UK
Seme LAB
15.43 KB
Metal gate rf silicon fet.
TetraFET D2010UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS .
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