* SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.5
D2013UK
Seme LAB
58.88 KB
Metal gate rf silicon fet.
TetraFET D2013UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W.
📁 Related Datasheet
D2010UK METAL GATE RF SILICON FET (Seme LAB)
D2011UK METAL GATE RF SILICON FET (Seme LAB)
D2012 NPN Silicon Power Transistor (STMicroelectronics)
D2012 Si NPN Transistor (Wuxi Youda Electronics)
D2012 2SD2012 (Toshiba Semiconductor)
D2012UK METAL GATE RF SILICON FET (Seme LAB)
D2014UK RF SILICON FET (Seme LAB)
D2014UK RF Silicon Mosfet (TT)
D2015UK METAL GATE RF SILICON FET (Seme LAB)
D2015UK RF Silicon Mosfet (TT)
