metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* LOW NOISE
* HIGH GAIN
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS f.
* LOW Crss
* LOW NOISE
* HIGH GAIN
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
ABSOLUT.
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