* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* LOW NOISE
* HIGH GAIN APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation
D2211UK
Seme LAB
26.31 KB
Metal gate rf silicon fet.
TetraFET D2211UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D E B 8 7 6 F 5 O J K L C 1 2 A 3 4 Q N M I P H G DBC1 Packag.
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