* SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.5
D2213UK
Seme LAB
19.56 KB
Metal gate rf silicon fet.
TetraFET LAB MECHANICAL DATA A K B (2 pls) E SEME D2213UK METAL GATE RF SILICON FET C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.
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