* I P H G
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2
D2253UK
Seme LAB
20.26 KB
Metal gate rf silicon fet.
TetraFET D2253UK METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 1 7 6 3 4 2 C R A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMO.
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