Full PDF Text Transcription for HCS65R600S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HCS65R600S. For precise diagrams, and layout, please refer to the original PDF.
HCS65R600S HCS65R600S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very ...
View more extracted text
ior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.54 ȍ ID = 7.3 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Static AC (f
HCS65R600S Datasheet
