Full PDF Text Transcription for HCS70R600S (Reference)
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HCS70R600S HCS70R600S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very ...
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ior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 700 V RDS(on) typ = 0.54 ȍ ID = 7.3 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Static AC (f
HCS70R600S Datasheet
