HFC1N70 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFC1N70 Dec 2008 HFC1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage.