HFH9N90 Description
HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0.
HFH9N90 Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
HUASHAN ELECTRONIC |
HFH9N90 | N-Channel Enhancement Mode Field Effect Transistor |
HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0.