HFH9N90 Datasheet | Specifications & PDF Download

HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanch

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Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel en

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