HFI6N90 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFI6N90
Manufacturer	SemiHow
File Size	187.54 KB
Description	N-Channel MOSFET
Datasheet	HFI6N90 Datasheet
Additional preview pages of the HFI6N90 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.95 ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.95 ȍ ID = 6.0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS.

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Published: Mar 26, 2016 |