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HFI6N90 Datasheet N-channel MOSFET

Manufacturer: SemiHow

Overview: HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET.

Datasheet Details

Part number HFI6N90
Manufacturer SemiHow
File Size 187.54 KB
Description N-Channel MOSFET
Datasheet HFI6N90-SemiHow.pdf

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.95 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.95 ȍ ID = 6.0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS.

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