Full PDF Text Transcription for HFI50N06 (Reference)
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HFI50N06. For precise diagrams, and layout, please refer to the original PDF.
HFW50N06_HFI50N06 Nov 2009 HFW50N06 / HFI50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES Originative New Design Superior Avalanche Rugged T...
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= 50 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3.
HFI50N06 Datasheet
