Full PDF Text Transcription for HFI5N65S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFI5N65S. For precise diagrams, and layout, please refer to the original PDF.
HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A FEATURES Originative New Design Superior Avalanche R...
View more extracted text
ȍ ID = 4.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW5N65S HFI5N65S 1.Gate 2. Drain 3.
HFI5N65S Datasheet
