HFP4N65 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP4N65 April 2006 HFP4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu.

Brand Logo	Part Number	Description	Manufacturer
	HFP4N65	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC