HFP4N65 Description
HFP4N65 April 2006 HFP4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6.
HFP4N65 Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
HUASHAN ELECTRONIC |
HFP4N65 | N-Channel Enhancement Mode Field Effect Transistor |
HFP4N65 April 2006 HFP4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6.