HFP4N65 Datasheet | Specifications & PDF Download

HFP4N65 April 2006 HFP4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 A FEATURES  Originative New Design  Superior Avalanc

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Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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