HFP640G Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Dr.

Brand Logo	Part Number	Description	Manufacturer
	HFP640	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan